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| MJD44H11 Datasheet, PDF (1/4 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS | |||
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MJD44H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
⢠Load Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK, â- Iâ Suffix)
1
⢠Electrically Similar to Popular MJE44H
⢠Fast Switching Speeds
⢠Low Collector Emitter Saturation Voltage
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
IEBO
hFE
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(on)
*Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = 30mA, IB = 0
VCE = 80V, IB = 0
VBE = 5V, IC = 0
VCE = 1V, IC = 2A
VCE = 1V, IC = 4A
IC = 8A, IB = 0.4A
IC = 8A, IB = 0.8A
VCE = 10V, IC = 0.5A
VCB =10V, f = 1MHz
IC = 5A
IB1 = - IB2 = 0.5A
Value
80
5
8
16
20
1.75
150
- 65 ~ 150
Units
V
V
A
A
W
W
°C
°C
Min.
80
60
40
Typ.
50
130
300
500
140
Max.
10
50
Units
V
µA
µA
1
V
1.5
V
MHz
pF
ns
ns
ns
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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