MJD340 Datasheet, PDF (1/4 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

MJD340
High Voltage Power Transistors
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T_C=25°C)
Collector Dissipation (T_a=25°C)
Junction Temperature
Storage Temperature
Value
300
300
3
0.5
0.75
15
1.56
150
- 65 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_CEO(sus) * Collector Emitter Sustaining Voltage
I_CEO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
h_FE
* DC Current Gain
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_C = 1mA, I_B = 0
V_CB = 300V, I_E =0
V_EB = 3V, I_C = 0
V_CE = 10V, I_C = 50mA
Min.
300
30
Max.
0.1
0.1
240
Units
V
mA
mA
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001