 English |
|
|
|
|
|
|
|
| MJD32 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications | |||
| |||
|
MJD32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
⢠Load Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK, â- Iâ Suffix)
⢠Electrically Similar to Popular TIP32 and TIP32C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: MJD32
: MJD32C
Value
- 40
- 100
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: MJD32
: MJD32C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
- 40
- 100
-5
-3
-5
-1
15
1.56
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
* Collector-Emitter Sustaining Voltage
: MJD32
: MJD32C
Collector Cut-off Current
: MJD32
: MJD32C
Collector Cut-off Current
: MJD32
: MJD32C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
Test Condition
IC = - 30mA, IB = 0
VCE = - 40V, IB = 0
VCE = - 60V, IB = 0
VCE = - 40V, VBE = 0
VCE = - 100V, VBE = 0
VBE = - 5V, IC = 0
VCE = - 4V, IC = - 1A
VCE = - 4V, IC = - 3A
IC = - 3, IB = - 375mA
VCE = - 4A, IC = - 3A
VCE = -10V, IC = - 500mA
Min.
-40
-100
25
10
3
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
-50 µA
-50 µA
-20 µA
-20 µA
-1
mA
50
-1.2
V
-1.8
V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese