MJD31CTF Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

MJD31/31C
NPN Epitaxial Silicon Transistor
Features
• General Purpose Amplifier
• Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
February 2012
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: MJD31
: MJD31C
V_CEO
Collector-Emitter Voltage
: MJD31
: MJD31C
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T_C = 25°C)
Collector Dissipation (T_a = 25°C)
Junction Temperature
Storage Temperature
Value
40
100
40
100
5
3
1
1
15
1.56
150
- 65 to 150
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Ordering Information
Part Number
MJD31CTF
MJD31CITU
Marking
MJD31C
MJD31C-I
Package
D-PAK
I-PAK
Packing Method
Tape & Reel
Tube
Remarks
© 2012 Fairchild Semiconductor Corporation
MJD31/31C Rev. A4
1
www.fairchildsemi.com