MJD200 Datasheet, PDF (1/5 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

MJD200
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_B
I_C
I_CP
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T_C = 25°C)
Collector Dissipation (T_a = 25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_CBO(sus)
I_CEO
I_CBO
I_EBO
h_FE
V_CE (sat)
* Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
V_BE (sat)
* Base-Emitter Saturation Voltage
V_BE (on)
* Base-Emitter ON Voltage
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_C=100mA, I_B=0
V_CB=40V, I_E=0
V_EBO=8V, I_C=0
V_CE=1V, I_C=500mA
V_CE=1V, I_C=2A
V_CE=2V, I_C=5A
I_C=500mA, I_B=50mA
I_C=2A, I_B=200mA
I_C=5A, I_B=1A
I_C=5A, I_B=2A
V_CE=1V, I_C=2A
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=0.1MHz
Value
40
25
8
1
5
10
12.5
1.4
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
25
70
45
10
65
Max.
100
100
Units
V
nA
nA
180
0.3
0.75
1.8
2.5
1.6
80
V
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001