MJD117 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MJD117
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP117
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T_C=25°C)
Collector Dissipation (T_a=25°C)
Junction Temperature
Storage Temperature
- 100
V
- 100
V
-5
V
-2
A
-4
A
- 50
mA
20
W
1.75
W
150
°C
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
R2
E
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_CEO (sus)
I_CEO
I_CBO
I_EBO
h_FE
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
V_CE(sat)
*Collector-Emitter Saturation Voltage
V_BE(sat)
V_BE(on)
f_T
C_ob
*Base-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_C = - 30mA, I_B = 0
V_CE = - 50V, I_B = 0
V_CB = - 100V, I_E = 0
V_EB = - 5V, I_C = 0
V_CE = - 3V, V_EB = - 0.5A
V_CE = - 3V, V_EB = - 2A
V_CE = - 3V, I_C = - 4A
I_C = -2A, I_B = - 8mA
I_C = - 4A, I_B = - 40mA
I_C = - 4A, I_B = - 40mA
V_CE = - 3A, I_C = - 2A
V_CE = -10V, I_C = - 0.75A
V_CB = - 10V, I_E = 0
f= 0.1MHz
Min.
- 100
500
1000
200
25
Max.
- 20
- 20
-2
12K
-2
-3
-4
- 2.8
200
Units
V
µA
µA
mA
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001