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| MJD112_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – Complementary Darlington Power Transistors | |||
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MJD112
NPN Silicon Darlington Transistor
Features
⢠High DC Current Gain
⢠Built-in a Damper Diode at E-C
⢠Lead Formed for Surface Mount Applications (No Suffix)
November 2006
tm
Equivalent Circuit
C
B
1
D-PAK
1.Base 2.Collector 3.Emitter
R1
R2
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
R1 â
10kâ¦
E
R2 â
0.6kâ¦
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
100
100
5
2
4
50
20
1.75
150
- 65 ~ 150
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICBO
IEBO
hFE
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = 30mA, IB = 0
VCE = 50V, IB = 0
VCB = 100V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 2A, IB = 8mA
IC = 4A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3A, IC = 2A
VCE = 10V, IC = 0.75A
VCB = 10V, IE = 0
f = 0.1MHz
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
Min.
100
500
1000
200
25
Units
V
V
V
A
A
mA
W
W
°C
°C
Max.
20
20
2
12K
2
3
4
2.8
100
Units
V
µA
µA
mA
V
V
V
V
MHz
pF
©2006 Fairchild Semiconductor Corporation
1
MJD112 Rev. B
www.fairchildsemi.com
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