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| MJD112 Datasheet, PDF (1/5 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | |||
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MJD112
D-PAK for Surface Mount Applications
⢠High DC Current Gain
⢠Built-in a Damper Diode at E-C
⢠Lead Formed for Surface Mount Applications (No Suffix)
⢠Straight Lead (I-PAK, â - I â Suffix)
⢠Electrically Similar to Popular TIP112
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
100
V
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
5
V
Collector Current (DC)
2
A
Collector Current (Pulse)
4
A
Base Current
50
mA
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
Junction Temperature
150
°C
Storage Temperature
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 â
10kâ¦
R2 â
0.6kâ¦
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICBO
IEBO
hFE
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
fT
Cob
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = 30mA, IB = 0
VCE = 50V, IB = 0
VCB = 100V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 2A, IB = 8mA
IC = 4A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3A, IC = 2A
VCE = 10V, IC = 0.75A
VCB = 10V, IE = 0
f = 0.1MHz
Min.
100
500
1000
200
25
Max.
20
20
2
12K
2
3
4
2.8
100
Units
V
µA
µA
mA
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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