MBRS320 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – SCHOTTKY POWER RECTIFIER

MBRS320
SCHOTTKY POWER RECTIFIER
General Description:
Schottky Barrier Diodes make use of the rectification effect
of a metal to silicon barrier. They are ideally suited for high
frequency rectification in switching regulators & converters.
This device offers a low forward voltage performance in a
power surface mount package in applications where size and
weight are critical.
Features:
• Compact surface mount package with J-bend leads (SMC).
• 3.0 Watt Power Dissipation package.
• 3.0 Ampere, forward voltage less than 500 mv
Ordering:
• 13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings* TA = 25^OC unless otherwise noted
Parameter
Value
Storage Temperature
-65 to +150
Maximum Junction Temperature
-65 to +125
Repetitive Peak Reverse Voltage (V_RRM)
20
Average Rectified Forward Current (T_L = 100^OC)
3.0
(T_L = 90^OC)
4.0
Surge Non Repetitive Forward Current
80
(Half wave, single phase, 60 Hz)
Junction to Case for Thermal Resistance (R_ØJL)
11
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SMC Package
(DO-214AB)
Units
O_C
O_C
V
A
A
A
O_C/W
Top Mark: B32
1
2
Electrical Characteristics TA = 25^OC unless otherwise noted
Actual Size
SYM
CHARACTERISTICS MIN
I_R Reverse Leakage Current
PW 300 us, <2% Duty Cycle
V_F Forward Voltage
PW 300 us, <2% Duty Cycle
MAX
2.0
20
500
UNITS
mA
mA
mV
TEST CONDITIONS
V_R = 20 V; Tj = 25^OC
V_R = 20 V; Tj = 100^OC
I_F = 3.0 A; Tj = 25^OC
© 1997 Fairchild Semiconductor Corporation