MBR4035PT_01 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Schottky Rectifiers

MBR4035PT - MBR4060PT
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
123
TO-3P/TO-247AD
PIN 1
PIN 3
+
CASE
PIN 2
Schottky Rectifiers
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
T_stg
T_J
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T_A = 125°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
4035PT
35
Value
4045PT 4050PT
45
50
4060PT
60
Units
V
40
A
400
A
-65 to +175
°C
-65 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P_D
R_θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Lead
Value
3.0
1.2
Units
W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage I_{F =} 20 A, T_C = 25°C
I_{F =} 20 A, T_C = 125°C
I_{F =} 40 A, T_C = 25°C
I_{F =} 40 A, T_C = 125°C
I_R
Reverse Current @ rated V_R T_A = 25°C
T_A = 125°C
I_RRM
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Device
4035PT 4045PT
0.70
0.60
0.80
0.75
4050PT 4060PT
0.72
0.62
-
-
1.0
100
Units
V
V
V
V
mA
mA
2.0
1.0
A
2001 Fairchild Semiconductor Corporation
MBR4035PT - MBR4060PT, Rev. C