MBR3035PT Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Schottky Rectifiers

MBR3035PT - MBR3060PT
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
123
TO-3P/TO-247AD
PIN 1
PIN 3
+
CASE
PIN 2
Schottky Rectifiers
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
3035PT 3045PT 3050PT
V_RRM
Maximum Repetitive Reverse Voltage
35
45
50
I_F(AV)
Average Rectified Forward Current
30
I_FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
200
T_stg
Storage Temperature Range
-65 to +175
T_J
Operating Junction Temperature
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3060PT
60
Units
V
A
A
°C
°C
Thermal Characteristics
Symbol
P_D
R_θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Lead
Value
3.0
1.4
Units
W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage I_{F =} 20 A, T_C = 25°C
I_{F =} 20 A, T_C = 125°C
I_{F =} 30 A, T_C = 25°C
I_{F =} 30 A, T_C = 125°C
I_R
Reverse Current @ rated V_R T_A = 25°C
T_A = 125°C
I_RRM
Peak Repetitive Reverse Surge Current
2.0 us Pulsu Width, f = 1.0 KHz
Device
3035PT 3045PT
-
0.60
0.76
0.72
3050PT 3060PT
0.75
0.65
-
-
Units
V
V
V
V
1.0
5.0
mA
60
100
mA
1.0
0.5
A
2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT, Rev. C