MBR2535CT_11 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 20.0 AMPS. Schottky Barrier Rectifiers

December 2011
MBR2535CT - MBR2560CT
25 Ampere Schottky Barrier Rectifiers
Features
• Low power loss, high efficiency.
• High surge capability.
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
• Metal silicon junction, majority carrier conduction.
• High current capability, low forward voltage drop.
• Guardring for over voltage protection.
1
2
3
TO-220AB
PIN1
PIN3
+
CASE
PIN2
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
2535CT 2545CT 2550CT 2560CT
V_RRM Maximum Repetitive Reverse Voltage
35
45
50
60
V
I_F(AV)
Average Rectified Forward Current
.375 " lead length @ T_A = 130°C
25
A
I_FSM
Non-repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
200
A
T_STG Storage Temperature Range
-65 to +175
°C
T_J
Operating Junction Temperature Range
-65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P_D
R_θJA
R_θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
2.0
60
1.5
Units
W
°C/W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise specified
Symbol
Parameter
Value
2535CT 2545CT 2550CT 2560CT
V_F
Maximum Forward Voltage, per leg
I_F = 12.5A, T_C = 25°C
I_F = 12.5A, T_C = 125°C
I_F = 25A, T_C = 25°C
I_F = 25A, T_C = 125°C
0.75
0.65
0.82
0.73
I_R
Maximum Reverse Current at rated V_RRM, per leg
@ T_A = 25°C
0.2
@ T_A = 125°C
15.0
0.2
10.0
I_RRM Peak Repetitive Reverse Surge Current, per leg
1.0
0.5
2.0 μs Pulse Width, f = 1.0 KHz
C_j
Typical Junction Capacitance, per leg
600
460
Units
V
mA
A
pF
© 2011 Fairchild Semiconductor Corporation
MBR2535CT - MBR2560CT Rev. C2
1
www.fairchildsemi.com