MBR20S100CT Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Barrier Rectifier

MBR20S100CT
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
123
TO-220
Marking: YM20S100CT
1. Anode 2.Cathode 3. Anode
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
V_R
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@T_C = 135°C
Non-Repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
R_θJC
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM*
I_RM*
Maximum Instantaneous Forward Voltage
I_F = 10A
I_F = 10A
I_F = 20A
I_F = 20A
Maximum Instantaneous Reverse Current
@ rated V_R
* Pulse Test: Width = 300µs, Duty Cycle = 2%
T_C = 25°C
T_C = 125°C
T_C = 25°C
T_C = 125°C
T_C = 25°C
T_C = 125°C
Value
100
100
20
200
-65 to +150
Value
1.54
Value
-
0.70
0.95
0.85
0.1
20
Units
V
V
A
A
°C
Units
°C/W
Units
V
V
V
V
mA
mA
©2005 Fairchild Semiconductor Corporation
1
MBR20S100CT Rev. A
www.fairchildsemi.com