MBR2035CT Datasheet, PDF (1/3 Pages) Motorola, Inc – SWITCHMODE™ Power Rectifiers

MBR2035CT - MBR2060CT
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
1
2
3
TO-220AB
PIN 1
PIN 3
+
CASE
PIN 2
Schottky Rectifiers
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
2035CT 2045CT 2050CT
V_RRM
I_F(AV)
I_FSM
T_stg
T_J
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T_A = 135°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
45
50
20
150
-65 to +175
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2060CT
60
Units
V
A
A
°C
°C
Thermal Characteristics
Symbol
Parameter
P_D
Power Dissipation
R_θJA
Thermal Resistance, Junction to Ambient *
R_θJL
Thermal Resistance, Junction to Lead
Value
2.0
60
2.0
Units
W
°C/W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage I_{F =} 10 A, T_C = 25°C
I_{F =} 10 A, T_C = 125°C
I_{F =} 20 A, T_C = 25°C
I_{F =} 20 A, T_C = 125°C
I_R
Reverse Current @ rated V_R T_A = 25°C
T_A = 125°C
I_RRM
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Device
2035CT 2045CT
-
0.57
0.84
0.72
2050CT 2060CT
0.80
0.70
0.95
0.85
0.1
0.15
15
150
1.0
0.5
Units
V
V
V
V
mA
mA
A
2001 Fairchild Semiconductor Corporation
MBR2035CT - MBR2060CT, Rev. C