MBR20200CT_10 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Dual High Voltage Schottky Rectifier

MBR20200CT
Dual High Voltage Schottky Rectifier
November 2010
Features
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• RoHS Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
• Wave Soldering or per MIL-STD-750 Method 2026.
1 23
Mark : MBR20200CT
1. Anode
3. Anode
2. and Tab Cathode
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V_RRM
Maximum Repetitive Reverse Voltage
200
V
V_R
Maximum DC Reverse Voltage
200
V
I_F(AV)
Average Rectified Forward Current, T_C=115°C
10 (Per Leg)
20 (Per Device)
A
I_FSM
Peak Forward Surge Current, 8.3mS Half Sine wave
150
A
T_STG
Storage Temperature Range
-55 to +150
°C
T_J
Operating Junction Temperature
150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T_a = 25°C unless otherwise noted
Symbol
Parameter
R_θJC
Thermal Resistance, Junction to Case per Leg
R_θJA
Thermal Resistance, Junction to Ambient per Leg
* MIL standard 883-1012 & JESD51-10
Max.
1.5
62.5
Unit
°C/W
°C/W
Electrical Characteristics* T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_R
Reverse Current
V_R= 200V
V_R= 200V
T_C = 25 °C
T_C = 125 °C
I_F= 10A
T_C = 25 °C
V_F
Forward Voltage
I_F= 10A
I_F= 20A
T_C = 125 °C
T_C = 25 °C
I_F= 20A
T_C = 125 °C
* DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%
Min.
Max.
0.2
5
0.9
0.8
1.0
0.9
Unit
mA
V
© 2010 Fairchild Semiconductor Corporation
MBR20200CT Rev. A2
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www.fairchildsemi.com