MBR20100CT Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual High-Voltage Schottky Rectifiers

MBR20100CT
Dual High Voltage Schottky Rectifier
October 2010
Features
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Rohs Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
TO-220
1
Mark : MBR20100CT
+
PIN1
PIN3
_
PIN2
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V_RRM
Maximum Repetitive Reverse Voltage
100
V
V_R
Maximum DC Reverse Voltage
100
V
I_F(AV)
Average Rectified Forward Current, T_c= 120°C
10 (Per Leg)
20 (Per Device)
A
I_FSM
Peak Forward Surge Current, 8.3mS Half Sine wave
150
A
T_STG
Storage Temperature Range
-55 to 150
°C
T_J
Operating Junction Temperature
150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T_a = 25°C unless otherwise noted
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction to Case per Leg
Thermal Resistance, Junction to Ambient per Leg
* JESD51-10
Max.
1.5
62.5
Unit
°C/W
°C/W
Electrical Characteristics* T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_R
Reverse Current
V_F
Forward Voltage
V_R= 100V
V_R= 100V
I_F= 10A
I_F= 10A
I_F= 20A
I_F= 20A
T_c = 25 °C
T_c = 125 °C
T_c = 25 °C
T_c = 125 °C
T_c = 25 °C
T_c = 125 °C
* DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%
Min.
Max.
0.2
5
0.8
0.7
0.9
0.8
Unit
mA
V
© 2010 Fairchild Semiconductor Corporation
MBR20100CT Rev. A0
1
www.fairchildsemi.com