MBR1035_12 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Schottky Rectifiers

June 2012
MBR1035 - MBR1060
Schottky Rectifiers
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency inverters,
PIIN1
free wheeling, and polarity protection applications.
• Metal silicon junction, majority carrier conduction
PIIN2
Case
• High current capacity, low forward voltage drop
• Guard ring for over voltage protection.
12
TO-220AC
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
1035
Value
1045
1050
Units
1060
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
35
45
50
60
V
10
A
150
A
T_stg Storage Temperature Range
-65 to +175
°C
T_J Operating Junction Temperature
-65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
P_D
R_θJA
R_θJL
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
2.0
60
2.0
Units
W
°C/W
°C/W
Electrical Characteritics T_a = 25°C unless otherwise noted
Symbol
Parameter
1035
Value
1045
1050
1060
V_F
I_R
I_RRM
Forward Voltage
I_F = 10A, T_C = 25°C
I_F = 10A, T_C = 125°C
I_F = 20A, T_C = 25°C
I_F = 20A, T_C = 125°C
Reverse Current @ rated V_R T_C = 25°C
T_C = 125°C
Peak Repetitive Reverse Surge Current
2.0μs Pulse Width, f = 1.0 KHz
-
0.80
0.57
0.70
0.84
0.95
0.72
0.85
0.1
15
1.0
0.5
Units
V
V
V
V
mA
mA
A
© 2012 Fairchild Semiconductor Corporation
MBR1035 - MBR1060 Rev. D0
1
www.fairchildsemi.com