MBR1035_01 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Schottky Rectifiers

MBR1035 - MBR1060
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
12
TO-220AC
PIN 1 +
PIN 2 -
CASE Positive
+
CASE
Schottky Rectifiers
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
1035
Value
1045 1050
V_RRM
I_F(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
35
45
50
10
I_FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
T_stg
Storage Temperature Range
T_J
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
150
-65 to +175
-65 to +150
Thermal Characteristics
Symbol
P_D
R_θJA
R_θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
2.0
60
2.0
1060
60
Units
V
A
A
°C
°C
Units
W
°C/W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage I_{F =} 10 A, T_C = 25°C
I_{F =} 10 A, T_C = 125°C
I_{F =} 20 A, T_C = 25°C
I_{F =} 20 A, T_C = 125°C
I_R
Reverse Current @ rated V_R T_A = 25°C
T_A = 125°C
I_RRM
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Device
1035 1045
-
0.57
0.84
0.72
1050 1060
0.80
0.70
0.95
0.85
0.1
15
1.0
0.5
Units
V
V
V
V
mA
mA
A
2001 Fairchild Semiconductor Corporation
MBR1035 - MBR1060, Rev. C