MB10S Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Bridge Rectifier

MB10S
Bridge Rectifier
July 2010
Features
• Low leakage
• Surge overload rating : 35 amperes peak.
• Ideal for printed circuit board.
• UL certified, UL #E111753 and E326243.
SOIC-4
Polarity symbols molded
or marking on body
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_RRM Maximum Repetitive Reverse Voltage
1000
V
V_RMS Maximum RMS Bridge Input Voltage
700
V
V_R
DC Reverse Voltage (Rated V_R)
1000
V
I_F(AV) Average Rectified Forward Current, @ T_A = 50°C
On Glass-epoxy P.C.B.
0.5
On Aluminum substrate
0.8
A
I_FSM
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
35
A
T_STG Storage Temperature Range
-55 to +150
°C
T_J
Operating Junction Temperature
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
P_D
Power Dissipation
R_θJA Thermal Resistance, Junction to Ambient,* per leg
R_θJL Thermal Resistance, Junction to Lead,* per leg
* Device mounted on PCB with 0.5" x 0.5" (13 x 13 mm) lead length
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage, per bridge @ 0.5 A
I_R
Reverse Current, per leg @ Rated V_R
T_A = 25°C
T_A = 125°C
I²t rating for fusing t < 8.3 ms
C_T
Total Capacitance, per leg V_R = 4.0V, f = 1.0MHz
Value
1.4
85
20
Value
1.0
5.0
0.5
5.0
13
Units
W
°C/W
°C/W
Units
V
µA
mA
A²s
pF
© 2010 Fairchild Semiconductor Corporation
MB10S Rev. A0
1
www.fairchildsemi.com