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| KST92 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Transistor | |||
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KST92/93
High Voltage Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector Base Voltage
: KST92
: KST93
VCEO
Collector-Emitter Voltage
: KST92
: KST93
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
TSTG
Storage Temperature
RTH(j-a)
Thermal Resistance junction to Ambient
⢠Refer to KSP92/93 for graphs
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-300
-200
-300
-200
-5
-500
350
150
357
Units
V
V
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
: KST92
: KST93
IC= -100µA, IE=0
BVCEO
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
IC= -1mA, IB=0
BVEBO
ICBO
IEBO
hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST92
: KST93
Emitter Cut-off Current
* DC Current Gain
VCE (sat)
VBE (sat)
Cob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KST92
: KST93
IE= -100µA, IC=0
VCB= -200V, IE=0
VCB= -160V, IE=0
VEB= -5V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
IC= -20mA, IB= -2mA
IC= -20mA, IB= -2mA
VCB= -20V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCE= -20V, IC= -10mA
f=100MHz
Min.
-300
-200
-300
-200
-5
25
40
25
50
Max. Units
V
V
V
V
V
-0.25
µA
-0.25
µA
-0.1
µA
-0.5
V
-0.9
V
6
pF
8
pF
MHz
©2003 Fairchild Semiconductor Corporation
Rev. B2, January 2003
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