KST63 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Darlington Transistor

KST63/64
Darlington Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-30
-30
-10
-500
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CES
I_CBO
I_EBO
h_FE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KST63
: KST64
: KST63
: K ST64
I_C= -100, V_BE=0
V_CE= -30V, I_E=0
V_EB= -10V, I_C=0
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -100mA
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse test: PW≤300µs, Duty Cycle≤2%
I_C= -100mA, I_B= -0.1mA
V_CE= -5V, I_C= -100mA
V_CE= -5V, I_C= -10mA
f=100MHz
Min. Max. Units
-30
V
-100
nA
-100
nA
5K
10K
10K
20K
-1.5
V
-2.0
V
125
MHz
Marking Code
Type
Mark
KST63
2U
KST64
2V
Marking
2U
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002