KST56MTF Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

KST55/56
Driver Transistor
• Collector-Emitter Voltage: V_CEO = KST55: - 60V
KST56: - 80V
• Collector Power Dissipation: P_C (max) = 350mW
• Complement to KST05/06
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector Base Voltage
: KST55
: KST56
V_CEO
Collector-Emitter Voltage
: KST55
: KST56
V_EBO
I_C
P_C
T_STG
R_TH(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
* Collector-Emitter Breakdown Voltage
: KST55
: KST56
I_C= -1mA, I_B=0
BV_EBO
I_CBO
I_CEO
h_FE
* Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
: KST55
: KST56
DC Current Gain
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_E= -100µA, I_C=0
V_CB= -60V, I_E=0
V_CE= -60V, I_B=0
V_CE= -80V, I_B=0
V_CE= -1V, I_C= -10mA
V_CE= -1V, I_C= -100mA
I_C= -100mA, I_B= -10mA
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -100mA
f=100MHz
Marking Code
Type
Mark
KST55
2H
KST56
2G
Value
-60
-80
-60
-80
-4
-500
350
150
357
Units
V
V
V
V
V
mA
mW
°C
°C/W
Min. Max. Units
-60
V
-80
V
-4
V
-0.1
µA
-0.1
µA
-0.1
µA
50
50
-0.25
V
-1.2
V
50
MHz
Marking
2H
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002