KST5551 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Amplifier Transistor

KST5551
Amplifier Transistor
• Collector-Emitter Voltage: V_CEO=160V
3
• Collector Power Dissipation: P_C (max)=350mW
2
SOT-23
1 _{Mark: G1}
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
• Refer to 2N5551 for graphs
Value
180
160
6
600
350
150
-55 ~ 150
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
I_C=100µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CB=120V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1mA
V_CE=5V, I_C=10mA
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CE=10V, I_C=10mA,
f=100MHz
C_ob
Output Capacitance
NF
Noise Figure
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
V_CB=10V, I_E=0, f=1MHz
V_CE=5V, I_C=250µA, R_S=1KΩ,
f=10Hz to 15.7KMz
Min.
180
160
6
80
80
30
100
Units
V
V
V
mA
mW
°C
°C
Max.
50
50
Units
V
V
V
nA
nA
250
0.15
V
0.2
V
1
V
1
V
300 MHz
6
pF
8
dB
©2003 Fairchild Semiconductor Corporation
Rev. B2, February 2003