KST5550 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Transistor

KST5550
High Voltage Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
1 ^SOT-23
1. Base 2. Emitter 3. Collector
Value
160
140
6
600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
I_C=10µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CB=100V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1.0mA
V_CE=5V, I_C=10mA
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, V_CE=10V
f=100MHz
C_ob
Output Capacitance
V_CB=10V, I_E=0, f=1.0MHz
Min. Max. Units
160
V
140
V
6
V
100
nA
50
nA
60
60
250
20
0.15
V
0.25
V
1.0
V
1.2
V
100
300 MHz
6.0
pF
Marking
1F
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002