KST5401MTF Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Transistor

KST5401
High Voltage Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-160
-150
-5
-500
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
Test Condition
I_C= -100µA, I_E=0
I_C= -1.0mA, I_B=0
I_E= -10µA, I_C=0
V_CB= -100V, I_E=0
V_CE= -5V, I_C= -1.0mA
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -50mA
I_C= -10mA, I_B= -1.0mA
I_C= -50mA, I_B= -5mA
I_C= -10mA, I_B= -1.0mA
I_C= -50mA, I_B= -5mA
I_C= -10mA, V_CE= -10V
f=100MHz
C_ob
Output Capacitance
NF
Noise Figure
V_CB= -10V, I_E=0, f=1.0MHz
V_CE= -5V, I_C= -200µA
R_S=10KΩ, f=10Hz to 15.7KHz
Min.
-160
-150
-5
50
60
50
100
Max.
-50
Units
V
V
V
nA
240
-0.2
V
-0.5
V
-1.0
V
-1.0
V
300 MHz
6.0
pF
8.0
dB
Marking
2L
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002