KST5179 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – RF Amplifier Transistor

KST5179
RF Amplifier Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T_a=25°C)
Derate above 25°C
T_J
T_STG
Junction Temperature
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
20
12
2.5
50
350
2.8
150
-55 ~ 150
Units
V
V
V
mA
mW
mW/°C
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
f_T
C_ob
h_fe
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
G_PE
Power Gain
I_C=0.01mA, I_E=0
20
I_C=3mA, I_B=0
12
I_E=0.01mA, I_C=0
2.5
V_CB=15V, I_E=0
V_CE=1V, I_C=3mA
25
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=6V, I_C=5mA, f=100MHz
900
V_CB=10V, I_E=0, f=0.1MHz to 1MHz
V_CE=6V, I_C=2mA, f=1KHz
25
V_CE=6V, I_C=1.5mA, f=200MHz
R_S=50Ω
V_CE=6V, I_C=5mA, f=200MHz
15
Max.
0.02
Units
V
V
V
µA
0.4
V
1
V
MHz
1
pF
4.5
dB
dB
Marking
7H
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002