 English |
|
|
|
|
|
|
|
| KST5088MTF Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Low Noise Transistor | |||
| |||
|
KST5088/5089
Low Noise Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KST5088
: KST5089
VCEO
Collector-Emitter Voltage
: KST5088
: KST5089
VEBO
IC
PC
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
35
30
30
25
4.5
50
350
150
Units
V
V
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
: KST5088
: KST5089
IC=100µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
IC=1mA, IB=0
ICBO
IEBO
hFE
Collector Cut-off Current
: KST5088
: KST5089
Emitter Cut-off Current
DC Current Gain
: KST5088
: KST5089
: KST5088
: KST5089
: KST5088
: KST5089
VCB=20V, IE=0
VCB=15V, IE=0
VEB=3V, IC=0
VCE=5V, IC=100µA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE(sat)
VBE(sat)
fT
Cob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
: KST5088
: KST5089
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=500µA, f=20MHz
VCB=5V, IE=0, f=100KHz
IC=100µA, VCE=5V
RS=10Kâ¦, f=10Hz to 15.7KHz
Min.
Max. Units
35
V
30
V
30
V
25
V
50
nA
50
nA
50
nA
300
900
400
1,200
350
450
300
400
0.5
V
0.8
V
50
MHz
4
pF
3
dB
2
dB
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese