KST5086 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Low Noise Transistor

KST5086/5087
Low Noise Transistor
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
-50
-50
-3
-50
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
BV_CEO
I_CBO
h_FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: KST5086
: KST5087
: KST5086
: KST5087
: KST5086
: KST5087
Test Condition
I_C= -100µA, I_E=0
I_C= -1mA, I_B=0
V_CB= -20V, I_E=0
V_CE= -5V, I_C= -100µA
V_CE= -5V, I_C= -1mA
V_CE= -5V, I_C= -10mA
V_CE(sat)
V_BE(sat)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
I_C= -10mA, I_B= -1mA
I_C= -10mA, I_B= -1mA
V_CE= -5V, I_C= -500µA
f=20MHz
C_ob
Output Capacitance
V_CB= -5V, I_E=0
f=100MHz
NF
Noise Figure
: KST5086
: KST5087
: KST5087
I_C= -100µA, V_CE= -5V
R_S=3KΩ, f=1KHz
V_CE= -5V, I_C= -20mA
R_S=10KΩ, f=10Hz to 15.7KHz
Min.
Max. Units
-50
V
-50
V
-50
nA
150
500
250
800
150
250
150
250
-0.3
V
-0.85
V
40
MHz
4
pF
3
dB
2
dB
2
dB
Marking Code
Type
Mark
KST5086
2P
KST5087
2Q
Marking
2P
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002