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| KST4401 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Switching Transistor | |||
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KST4401
Switching Transistor
3
NPN Epitaxial Silicon Transistor
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Value
60
40
6
600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
IBEV
ICEX
hFE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
* DC Current Gain
VCE (sat)
VBE (sat)
fT
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
IC=100µA, IE=0
IC=1.0mA, IB=0
IE=100µA, IC=0
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=20mA, VCE=10V
f=100MHz
Cob
Output Capacitance
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
VCB=5V, IE=0, f=100KHz
VCC=30V, VBE=2V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
Min.
Max. Units
60
V
40
V
6
V
100
nA
100
nA
20
40
80
100
300
40
0.4
V
0.75
V
0.75
0.95
V
1.2
V
250
MHz
6.5
pF
35
ns
255
ns
Marking
2X
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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