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| KST42 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage Transistor | |||
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KST42/43
High Voltage Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector Base Voltage
: KST42
: KST43
VCEO
Collector-Emitter Voltage
: KST42
: KST43
VEBO
IC
PC
TSTG
RTH(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
300
200
300
200
6
500
350
150
357
Units
V
V
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Emitter Breakdown Voltage
: KST42
: KST43
Test Condition
IC=100µA, IE=0
BVCEO
* Collector -Emitter Breakdown Voltage
: KST42
: KST43
IC=1mA, IB=0
BVEBO
ICBO
IEBO
hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE (sat)
VBE (sat)
Cob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KST42
: KST43
IE=100µA, IC=0
VCB=200V, IE=0
VCB=5V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCB=20V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCE=20V, IC=10mA
f=100MHz
Min.
Max. Units
300
V
200
V
300
V
200
V
6
V
0.1
µA
0.1
µA
25
40
40
0.5
V
0.9
V
3
pF
4
pF
50
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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