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| KST4126MTF Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor | |||
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KST4126
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
RTH(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Value
-25
-25
-4
-200
350
150
357
Units
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
BVCBO
Collector-Base Breakdown Voltage
IC= -10µA, IE=0
-25
V
BVCEO
* Collector-Emitter Breakdown Voltage IC= -1mA, IE=0
-25
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
-4
ICBO
Collector Cut-off Current
VCB= -20V, IE=0
-50
nA
IEBO
Emitter Cut-off Current
VBE= -3V, IC=0
-50
nA
hFE
* DC Current Gain
VCE= -1V, IC= -2mA
VCE= -1V, IC= -50mA
120
360
60
VCE (sat) * Collector-Emitter Saturation Voltage IC= -50mA, IB= -5mA
-0.4
V
VBE (sat) * Base-Emitter Saturation Voltage
IC= -50mA, IB= -5mA
-0.95
V
fT
Current Gain Bandwidth Product
VCE= -20V, IC= -10mA, f=100MHz
250
MHz
Cib
Input Capacitance
VBE= -0.5V, IC=0, f=1MHz
10
pF
Cob
Output Capacitance
VCB= -5V, IE=0, f=1MHz
4.5
pF
NF
Noise Figure
VCE= -5V, IC= -100µA, RS=1Kâ¦
Noise Bandwidth=10Hz to 15.7KHz
4
dB
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
Marking
C3
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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