KST4125 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor

KST4125
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
T_STG
Storage Temperature
• Refer to KST3906 for graphs
Value
-30
-30
-4
-200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
V_CE (sat)
V_BE (sat)
f_T
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
I_C= -10µA, I_E=0
I_C= -1mA, I_E=0
I_E= -10µA, I_C=0
V_CB= -20V, I_E=0
V_EB= -3V, I_C=0
V_CE= -1V, I_C= -2.0mA
V_CE= -1V, I_C= -50mA
I_C= -50mA, I_B= -5.0mA
I_C= -50mA, I_B= -5.0mA
I_C= -10mA, V_CE= -20V
f=100MHz
C_ob
Output Capacitance
NF
Noise Figure
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V_CB= -5V, I_E=0, f=100KHz
I_C= -100µA, V_CE= -5V
R_S=1KΩ
f=10Hz to 15.7KHz
Min. Max. Units
-30
V
-30
V
-4
V
-50
nA
-50
nA
50
150
25
-0.4
V
-0.95
V
200
MHz
4.5
pF
5
dB
Marking
ZD
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002