KST4124 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor

KST4124
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
T_STG
Storage Temperature
• Refer to KST3904 for graphs
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
V_CE (sat)
V_BE (sat)
f_T
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
I_C=10µA, I_E=0
I_C=1.0mA, I_B=0
I_E=10µA, I_C=0
V_CB=20V, I_E=0
V_EB=3V, I_C=0
V_CE=1V, I_C=2mA
V_CE=1V, I_C=50mA
I_C=50mA, I_B=5.0mA
I_C=50mA, I_B=5.0mA
I_C=10mA, V_CE=20V
f=100MHz
C_ob
Output Capacitance
NF
Noise Figure
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V_CB=5V, I_E=0, f=1.0MHz
I_C=100µA, V_CE=5V
R_S=1KΩ
f=10Hz to 15.7KHz
Value
30
25
5
200
350
150
Units
V
V
V
mA
mW
°C
Min. Max. Units
30
V
25
V
5
V
50
nA
50
nA
120
360
60
0.3
V
0.95
V
300
MHz
4
pF
5
dB
Marking
ZC
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002