KST4123 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor

KST4123
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG
R_TH(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Value
40
30
5
200
350
150
357
Units
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
BV_CBO
Collector-Base Breakdown Voltage
I_C=10µA, I_E=0
40
V
BV_CEO
* Collector-Emitter Breakdown Voltage I_C=1mA, I_E=0
30
V
BV_EBO
Emitter-Base Breakdown Voltage
I_E=10µA, I_C=0
5
V
I_CBO
Collector Cut-off Current
V_CB=20V, I_E=0
50
nA
I_EBO
Emitter Cut-off Current
V_EB=3V, I_C=0
50
nA
h_FE
* DC Current Gain
V_CE=1V, I_C=2mA
V_CE=1V, I_C=50mA
50
150
25
V_CE (sat) * Collector-Emitter Saturation Voltage I_C=50mA, I_B=5mA
0.3
V
V_BE (sat) * Base-Emitter Saturation Voltage
I_C=50mA, I_B=5mA
0.95
V
f_T
Current Gain Bandwidth Product
V_CE=20V, I_C=10mA, f=100MHz
250
MHz
C_ib
Input Capacitance
V_BE=0.5V, I_C=0, f=100KHz
8
pF
C_ob
Output Capacitance
V_CB=5V, I_E=0, f=100KHz
4
pF
NF
Noise Figure
V_CE=5V, I_C=100µA, R_S=1KΩ
Noise Bandwidth=10Hz to 15.7KHz
6
dB
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
5B
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002