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| KST3906MTF Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor | |||
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KST3906
PNP Epitaxial Silicon Transistor
September 2010
Features
⢠General Purpose Transistor
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2A
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
-40
-40
-5
-200
350
150
Unit
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO Collector-Base Breakdown Voltage IC= -10μA, IE=0
BVCEO * Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
IE= -10μA, IC=0
ICEX Collector Cut-off Current
VCE= -30V, VEB= -3V
hFE
* DC Current Gain
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1mA
VCE= -1V, IC= -10mA
VCE= -1V, IC= -50mA
VCE= -1V, IC= -100mA
VCE (sat) * Collector-Emitter Saturation Voltage IC= -10mA, IB= -1.0mA
IC= -50mA, IB= -5.0mA
VBE (sat) * Base-Emitter Saturation Voltage
IC= -10mA, IB= -1.0mA
IC= -50mA, IB= -5.0mA
fT
Current Gain Bandwidth Product
IC= -10mA, VCE= -20V, f=100MHz
Cob
Output Capacitance
VCB= -5V, IE=0, f=1.0MHz
NF Noise Figure
IC= -100μA, VCE= -5V
RS=1KΩ, f=10Hz to 15.7KHz
tON
Turn On Time
VCC= -3V, VBE= -0.5V
IC= -10mA, IB1= -1mA
tOFF Turn Off Time
VCC= -3V, IC= -10mA
IB1=IB2= -1mA
* Pulse Test: Pulse Widthâ¤300μs, Duty Cycleâ¤2%
Min.
-40
-40
-5
60
80
100
60
30
-0.65
250
Max.
-50
Unit
V
V
V
nA
300
-0.25
-0.4
-0.85
-0.95
4.5
4
V
V
V
V
MHz
pF
dB
70
ns
300
ns
© 2010 Fairchild Semiconductor Corporation
KST3906 Rev. A3
1
www.fairchildsemi.com
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