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| KST3904_11 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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KST3904
NPN Epitaxial Silicon Transistor
November 2011
Features
⢠General Purpose Transistor
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
1A
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature Range
Value
60
40
6
200
350
-55 to 150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICEX
hFE
VCE(sat)
VBE(sat)
Cob
fT
NF
Collector-Base Breakdown Voltage IC=10μA, IE=0
* Collector-Emitter Breakdown Voltage IC=1mA, IB=0
Emitter-Base Breakdown Voltage
IE=10μA, IC=0
Collector Cut-off Current
VCE=30V, VEB=3V
* DC Current Gain
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
* Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
IC=50mA, IB=5mA
* Base-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Output Capacitance
VCB=5V, IE=0, f=1MHz
Current Gain-Bandwidth Product
VCE=20V, IC=10mA, f=100MHz
Noise Figure
IC=100μA, VCE=5V, RS=1KΩ,
f=10Hz to 15.7KHz
tON
Turn On Time
tOFF Turn Off Time
* Pulse Test: Pulse Widthâ¤300μs, Duty Cycleâ¤2%
VCC=3V, VBE=0.5V,
IC=10mA, IB1=1mA
VCC=3V, IC=10mA,
IB1=IB2=1mA
Min.
60
40
6
40
70
100
60
30
0.65
300
Max.
50
Units
V
V
V
nA
300
0.2
V
0.3
V
0.85
V
0.95
V
4
pF
MHz
5
dB
70
ns
250
ns
© 2011 Fairchild Semiconductor Corporation
KST3904 Rev. A2
1
www.fairchildsemi.com
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