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| KST3904 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – General Purpose Transistor | |||
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KST3904
General Purpose Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
60
40
6
200
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICEX
hFE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
VCE(sat)
VBE(sat)
Cob
fT
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Test Condition
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=30V, VEB=3V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCB=5V, IE=0, f=1MHz
VCE=20V, IC=10mA, f=100MHz
IC=100µA, VCE=5V, RS=1Kâ¦
f=10Hz to 15.7KHz
Min.
60
40
6
40
70
100
60
30
0.65
300
tON
Turn On Time
Turn Off Time
tOFF
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
VCC=3V, VBE=0.5V
IC=10mA, IB1=1mA
VCC=3V, IC=10mA,
IB1=IB2=1mA
Max.
50
Units
V
V
V
nA
300
0.2
V
0.3
V
0.85
V
0.95
V
4
pF
MHz
5
dB
70
ns
250
ns
Marking
1A
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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