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| KST2907 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – General Purpose Transistor | |||
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KST2907
General Purpose Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Parameter
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Value
-60
-40
-5
-600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICEX
ICBO
hFE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
VCE (sat)
VBE (sat)
fT
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
IC= -10µA, IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCE= -30V, VEB= -0.5V
VCB= -50V, IE=0
VCE= -10V, IC= -0.1mA
VCE= -10V, IC= -1.0mA
VCE= -10V, IC= -10mA
*VCE= -10V, IC= -150mA
*VCE= -10V, IC= -500mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -50mA, VCE= -20V
f=100MHz
Cob
Output Capacitance
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCB= -10V, IE=0, f=1.0MHz
VCC= -30V, IC= -150mA
IB1= -15mA
VCC= -6V, IC= -150mA
IB1=IB2= -15mA
Marking
Min.
Max. Units
-60
V
-40
V
-5
V
-50
nA
-0.02
µA
35
50
75
100
300
30
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8.0
pF
45
ns
100
ns
2B
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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