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KST2484 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Low Noise Transistor
KST2484
Low Noise Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
TSTG
Storage Temperature
• Refer to KSP5088 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat)
VBE (on)
Cob
NF
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=45V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
IC=1mA, IB=0.1mA
IC=1mA, VCE=5V
VCB=5.0V, IE=0, f=1MHz,
IC=10µA, VCE=5V
RS=10KΩ, f=1KHz
Value
60
60
6
50
350
150
Units
V
V
V
mA
mW
°C
Min. Max. Units
60
V
60
V
5
V
10
nA
10
nA
250
800
0.35
V
0.95
V
6
pF
3
dB
Marking
1U
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002