KST24 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – VHF Mixer Transistor

KST24
VHF Mixer Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
T_STG
Storage Temperature
R_TH(j-a)
Thermal Resistance Junction to Ambient
• Refer to KSP24 for graphs
Value
40
30
4
100
350
150
357
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ.
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
f_T
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
* Current Gain Bandwidth Product
I_C=100µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CB=15V, I_E=0
V_CE=10V, I_C=8mA
V_CE=10V, I_C=8mA
f=100MHz
40
30
4
30
400
620
C_ob
Output Capacitance
V_CB=10V, I_E=0, f=1MHz
G_G
Conversion Gain (213MHz to 45MHz) I_C=8mA, V_CC=20V
19
(60MHz to 45MHz) Oscillator Injection=150mV 24
* Pulse Test: PW≤300µs, Duty Cycle≤2%
0.25
24
29
Units
V
V
V
mA
mW
°C
°C/W
Max.
50
Units
V
V
V
nA
MHz
0.36
pF
dB
dB
Marking
3A
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002