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| KST2222A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose Transistor | |||
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KST2222A
General Purpose Transistor
3
NPN Epitaxial Silicon Transistor
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
75
40
6
600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
VCE (sat)
VBE (sat)
fT
Cob
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
Test Condition
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=20mA, VCE=20V, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=100µA, VCE=10V
RS=1Kâ¦, f=1MHz
VCC=30V, IC=150mA
VBE=0.5V, IB1=15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
Min.
75
40
6
35
50
75
100
40
0.6
300
Max.
0.01
Units
V
V
V
µA
300
0.3
V
1.0
V
1.2
V
2.0
V
MHz
8
pF
4
dB
35
ns
285
ns
Marking
1P
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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