KST13 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Darlington Amplifier Transistor

KST13/14
Darlington Amplifier Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_C
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
30
30
10
300
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CES
I_CBO
I_EBO
h_FE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KST13
: KST14
: KST13
: KST14
I_C=100µA, V_BE=0
V_CB=30V, I_E=0
V_EB=10V, I_C=0
V_CE=5V, I_C=10mA
V_CE=5V, I_C=100mA
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
I_C=100mA, I_B=0.1mA
V_CE=5V, I_C=100mA
V_CE=5V, I_C=10mA
f=100MHz
Min. Max. Units
30
V
100
nA
100
nA
5K
10K
10K
20K
1.5
V
2.0
V
125
MHz
Marking Code
Type
Mark
KST13
1M
Marking
KST14
1N
1M
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002