KST10 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – VHF/UHF Transistor

KST10
VHF/UHF Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
P_C
Collector Power Dissipation
T_STG
Storage Temperature
R_TH(j-a)
Thermal Resistance junction to Ambient
• Refer to KSP10 for graphs
Value
30
25
3
350
150
357
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
V_BE
f_T
C_ob
C_rb
C_c·rbb´
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Common-Base Feedback Capacitance
Collector Base Time Constant
Test Condition
I_C=100µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CB=25V, I_E=0
V_BE=2V, I_C=0
V_CE=10V, I_C=4mA
I_C=4mA, I_B=0.4mA
V_CE=10V, I_C=4mA
V_CE=10V, I_C=4mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_C=4mA, f=31.8MHz
Min.
30
25
3
60
650
Units
V
V
V
mW
°C
°C/W
Max.
100
100
Units
V
V
V
nA
nA
0.5
V
0.95
V
MHz
0.7
pF
0.65
pF
9
pF
Marking
3E
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002