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| KST06MTF Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Driver Transistor | |||
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KST05/06
Driver Transistor
⢠Collector-Emitter Voltage: VCEO = KST05: 60V
KST06: 80V
⢠Collector Power Dissipation: PC (max) = 350mW
⢠Complement to KST55/56
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collecto-Base Voltage
: KST05
: KST06
VCEO
Collector-Emitter Voltage
: KST05
: KST06
VEBO
IC
PC
TSTG
RTH(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Value
60
80
60
80
4
500
350
150
357
Units
V
V
V
V
V
mA
mW
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
* Collector-Emitter Breakdown Voltage
: KST05
: KST06
IC=1mA, IB=0
BVEBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST05
: KST06
IE=100µA, IC=0
VCB=60V, IE=0
VCB=80V, IE=0
ICEO
hFE
Collector Cut-off Current
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (on) Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCE=60V, IB=0
VCE=1V, IC=10mA
VCE=1V, IC=100mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=2V, IC=100mA, f=100MHz
Marking Code
Type
Mark
KST05
1H
KST06
1G
Min.
60
80
4
50
50
100
Max. Units
V
V
V
0.1
µA
0.1
µA
0.1
µA
0.25
V
1.2
V
MHz
Marking
1H
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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