KSR2205 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (SWITCHING APPLICATION)

KSR2205
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R₁=4.7KΩ, R₂=10KΩ)
• Complement to KSR1205
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
I_CBO
h_FE
V_CE (sat)
f_T
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
I_C= -10µA, I_E=0
I_C= -100µA, I_B=0
V_CB= -40V, I_E=0
V_CE= -5V, I_C= -5mA
I_C= -10mA, I_B= -0.5mA
V_CB= -10V, I_E=0
f=1.0MHz
C_ob
V_I(off)
V_I(on)
R₁
R₁/R₂
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
V_CE= -10V, I_C= -5mA
V_CE= -5V, I_C= -100µA
V_CE= -0.3V, I_C= -20mA
1
TO-92S
1.Emitter 2. Collector 3. Base
Equivalent Circuit
C
R1
B
R2
Value
-50
-50
-10
-100
300
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
-50
-50
30
-0.3
3.2
0.42
Typ.
5.5
200
4.7
0.47
Max.
-0.1
Units
V
V
µA
-0.3
V
pF
MHz
V
-2.5
V
6.2
KΩ
0.52
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002