KSR2113 Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP (SWITCHING APPLICATION)

KSR2113
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R₁=2.2KΩ, R₂=47KΩ)
• Complement to KSR1113
Marking
R63
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
I_CBO
h_FE
V_CE(sat)
f_T
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I_C= -10µA, I_E=0
I_C= -100µA, I_B=0
V_CB= -40V, I_E=0
V_CE= -5V, I_C= -5mA
I_C= -10mA, I_B= -0.5mA
V_CE= -10V I_C=-5mA
V_CB= -10V, I_E=0
f=1.0MHz
V_I(off)
V_I(on)
R₁
R₁/R₂
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
V_CE= -5V, I_C= -100µA
V_CE= -0.2V, I_C= -10mA
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
R1
B
R2
Value
-50
-50
-10
-100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
-50
-50
68
Typ.
200
5.5
Max.
-0.1
Units
V
V
µA
-0.3
V
MHz
pF
-0.5
V
-1.1
V
1.5
2.2
2.9
KΩ
0.042 0.047 0.052
©2002 Fairchild Semiconductor Corporation
Rev. A3, November 2002