KSR2009 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (SWITCHING APPLICATION)

KSR2009
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to KSR1009
1
TO-92
1. Emitter 2. Collector 3. Base
Equivalent Circuit
C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
I_CBO
h_FE
V_CE (sat)
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
I_C= -100µA, I_E=0
I_C= -1mA, I_B=0
V_CB= -30V, I_E=0
V_CE= -5V, I_C= -1mA
I_C= -10mA, I_B= -1mA
V_CB= -10V, I_E=0
f=1MHz
f_T
Current Gain Bandwidth Product
V_CE= -10V, I_C= -5mA
R
Input Resistor
R
B
Value
-40
-40
-5
-100
300
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
-40
-40
100
3.2
Typ.
5.5
200
4.7
Max.
-0.1
600
-0.3
Units
V
V
µA
V
pF
MHz
6.2
KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002