KSR1110 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

KSR1110
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10KΩ)
• Complement to KSR2110
Marking
R10
2
1 ^SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
R
B
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted

Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted

Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
I_CBO
h_FE
V_CE (sat)
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
I_C=100µA, I_E=0
I_E=1mA, I_B=0
V_CB=30V, I_E=0
V_CE=5V, I_C=1mA
I_C=10mA, I_B=1mA
V_CB=10V, I_E=0
f=1MHz
f_T
Current Gain Bandwidth Product
V_CE=10V, I_C=5mA
R
Input Resistor
Value
40
40
5
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
40
40
100
7
Typ.
3.7
250
10
Max.
0.1
600
0.3
Units
V
V
µA
V
pF
MHz
13
KΩ
©2000 Fairchild Semiconductor International
Rev. A, February 2000