KSR1005 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (SWITCHING APPLICATION)

KSR1005
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R₁=4.7KΩ, R₂=10KΩ)
• Complement to KSR2005
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
I_CBO
h_FE
V_CE(sat)
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
I_C=10µA, I_E=0
I_C=100µA, I_B=0
V_CB=40V, I_E=0
V_CE=5V, I_C=5mA
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
f=1MHz
f_T
V_I(off)
V_I(on)
R₁
R₁/R₂
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
V_CE=10V, I_C=5mA
V_CE=5V, I_C=100µA
V_CE=0.3V, I_C=20mA
1
TO-92
1. Emitter 2. Collector 3. Base
Equivalent Circuit
C
R1
B
R2
Value
50
50
10
100
300
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
50
50
30
0.3
3.2
0.42
Typ.
3.7
250
4.7
0.47
Max.
0.1
Units
V
V
µA
0.3
V
pF
MHz
V
2.5
V
6.2
KΩ
0.52
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002