KSP94 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage Transistor

KSP94
High Voltage Transistor
• High Collector-Emitter Voltage: V_CEO= -400V
• Low Collector-Emitter Saturation Voltage
• Complement to KSP44
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-400
-400
-6
-300
625
150
-55~150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CES
BV_EBO
I_CBO
I_CES
I_EBO
h_FE1
h_FE2
h_FE3
h_FE4
V_CE (sat)₁
V_CE (sat)₂
V_BE (sat)
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I_C= -100µA, I_E=0
I_C= -100µA, V_BE=0
I_E= -10µA, I_C=0
V_CB= -300V, V_E=0
V_CE= -400V, V_BE=0V
V_BE= -4V, I_C=0
V_CE= -10V, I_C= -1mA
V_CE= -10V, I_C= -10mA
V_CE= -10V, I_C= -50mA
V_CE= -10V, I_C= -100mA
I_C= -10mA, I_B= -1mA
I_C= -50mA, I_B= -5mA
I_C= -10mA, I_B= -1mA
V_CB= -20V, I_E=0, f=1MHz
Min.
-400
-400
-6
40
50
45
40
Typ.
7
Max.
-100
-1
-100
Units
V
V
V
nA
µA
nA
300
-500
mV
-750
mV
-750
mV
pF
©2002 Fairchild Semiconductor Corporation
Rev. A2, July 2002